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| ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (W) 12 20 VGS(off) (V) -1.5 to -4 -0.5 to -2.5 ID (A) 0.16 0.132 Features D D D D D High Breakdown Voltage: 220 V Normally "On" Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Applications D D D D D Normally "On" Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-226AA (TO-92) S 1 G 2 D 3 Top View Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg ND2012L 200 "30 0.16 0.1 0.8 0.8 0.32 156 ND2020L 200 "30 0.132 0.083 0.8 0.8 0.32 156 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range W _C/W _C -55 to 150 Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197. Applications information may also be obtained via FaxBack, request document #70612. Siliconix S-52426--Rev. C, 14-Apr-97 1 ND2012L/2020L Specificationsa Limits ND2012L ND2020L Parameter Static Symbol Test Conditions Typb Min Max Min Max Unit VGS = -8 V, ID = 10 mA Drain-Source Drain Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage V(BR)DSV VGS(off) IGSS VGS = -5 V, ID = 10 mA VDS = 5 V, ID = 10 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = 160 V, VGS = -8 V Drain Cutoff Current ID(off) TJ = 125_C VDS = 160 V, VGS = -5 V TJ = 125_C Drain-Saturation Currentc IDSS VDS = 10 V, VGS = 0 V VGS = 2 V, ID = 20 mA Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 20 mA TJ = 125_C Forward Transconductance c Common Source Output Conductancec gfs gos VDS = 7 5 V ID = 20 mA 7.5 V, 220 220 200 200 -1.5 -4 "10 "50 1 200 1 200 mA -0.5 -2.5 "10 "50 nA V 300 7 8 12.6 55 75 30 30 mA 12 30 20 50 W mS mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = -5 V, f = 1 MHz 35 10 2 100 20 5 100 20 5 pF Switchingd Turn-On Time td(on) tr td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = 25 V RL = 1250 W V, ID ^ 20 mA, VGEN = -5 V RG = 25 W 20 20 10 10 VDDQ20 ns Turn-Off Time 2 Siliconix S-52426--Rev. C, 14-Apr-97 ND2012L/2020L Typical Characteristics (25_C Unless Otherwise Noted) 100 Output Characteristics (ND2012) 0V -0.5 V -1 V 100 Output Characteristics (ND2020) VGS = 2 V 80 I D - Drain Current (mA) 0.2 V 0V -0.2 V -0.4 V 80 I D - Drain Current (A) VGS = 5 V 60 -1.5 V 60 -0.6 V 40 -1.4 V 40 -0.8 V -1 V -1.2 V 20 -2 V -2.5 V 20 0 0 0.4 0.8 1.2 1.6 2 VDS - Drain-to-Source Voltage (V) 500 0 0 0.4 0.8 1.2 1.6 2 VDS - Drain-to-Source Voltage (V) Transfer Characteristics (ND2012) VDS = 10 V TC = -55_C 25_C 125_C I D - Drain Current (mA) 200 Transfer Characteristics (ND2020) VDS = 10 V 160 400 I D - Drain Current (mA) 300 120 200 80 TC = 125_C 25_C -55_C 100 40 0 -4.5 -3.5 -2.5 -1.5 -0.5 0.5 0 -4.5 -3.5 -2.5 -1.5 -0.5 0.5 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) 25 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 20 mA, VGS = 0 V IDSS @ VDS = 7.5 V, VGS = 0 V 1000 25 On-Resistance vs. DrainCurrent VGS = 0 V rDS(on) - On-Resistance ( W ) rDS(on) 15 IDSS 10 400 600 rDS(on) - On-Resistance ( W ) 20 800 20 I DSS - Drain Current (mA) 15 ND2020 10 ND2012 5 200 5 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 10 100 ID - Drain Current (mA) 1K Siliconix S-52426--Rev. C, 14-Apr-97 3 ND2012L/2020L Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd) Normalized On-Resistance vs. Junction Temperature 2.25 g fs - Forward Transconductance (mS) rDS(on) - Drain-Source On-Resistance (Normalized) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -10 30 70 110 150 TJ - Junction Temperature (_C) VGS = 0 V ID = 20 mA Forward Transconductance and Output Conductance vs. Drain Current 350 300 250 200 150 100 50 0 1 10 100 ID - Drain Current (A) gfs gos VDS = 7.5 V Pulse Test 80 ms, 1% Duty Cycle 700 600 500 400 300 200 100 0 1K g os - Output Conductance (m S) Capacitance 120 100 C - Capacitance (pF) 80 60 40 20 0 0 C rss 1 10 20 30 40 50 1 C oss C iss VGS = -5 V f = 1 MHz t - Switching Time (ns) 100 Load Condition Effects on Switching td(on) VDD = 25 V VGS = 0 to -5 V RG = 25 W tf 10 td(off) tr 10 ID - Drain Current (A) 100 VDS - Drain-to-Source Voltage (V) 1 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) 4 Siliconix S-52426--Rev. C, 14-Apr-97 |
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